N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STMicroelectronics STB18N60M2

Nº de Estoque RS: 792-5707Marca: STMicroelectronicsPart Number: STB18N60M2
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Height

4.6mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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R$ 195,55

R$ 39,11 Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STMicroelectronics STB18N60M2
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R$ 195,55

R$ 39,11 Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STMicroelectronics STB18N60M2
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
5 - 20R$ 39,11R$ 195,55
25 - 45R$ 37,78R$ 188,90
50 - 120R$ 34,43R$ 172,15
125 - 245R$ 31,51R$ 157,55
250+R$ 30,37R$ 151,85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Height

4.6mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more