STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 400 mA, 600 V, 3-Pin SOT-223 STN1HNK60

Nº de Estoque RS: 687-5131Marca: STMicroelectronicsPart Number: STN1HNK60
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Especificações

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-223

Series

MDmesh, SuperMESH

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.25V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Width

3.5mm

Transistor Material

Si

Typical Gate Charge @ Vgs

7 nC @ 10 V

Height

1.8mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 169,90

R$ 16,99 Each (In a Pack of 10) (Sem VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 400 mA, 600 V, 3-Pin SOT-223 STN1HNK60
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R$ 169,90

R$ 16,99 Each (In a Pack of 10) (Sem VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 400 mA, 600 V, 3-Pin SOT-223 STN1HNK60
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
10 - 20R$ 16,99R$ 169,90
30 - 90R$ 16,34R$ 163,40
100 - 490R$ 12,50R$ 125,00
500 - 990R$ 10,73R$ 107,30
1000+R$ 8,75R$ 87,50

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-223

Series

MDmesh, SuperMESH

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.25V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Width

3.5mm

Transistor Material

Si

Typical Gate Charge @ Vgs

7 nC @ 10 V

Height

1.8mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more