Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
7 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Width
3.5mm
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Bobina)
5
P.O.A.
Embalagem de Produção (Bobina)
5
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
7 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Width
3.5mm
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalhes do produto