P-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC STMicroelectronics STS10P4LLF6

Nº de Estoque RS: 165-5564Marca: STMicroelectronicsPart Number: STS10P4LLF6
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Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

40 V

Series

STripFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Height

1.5mm

Forward Diode Voltage

1.1V

País de Origem

China

Detalhes do produto

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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R$ 49.925,00

R$ 19,97 Each (On a Reel of 2500) (Sem VAT)

P-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC STMicroelectronics STS10P4LLF6

R$ 49.925,00

R$ 19,97 Each (On a Reel of 2500) (Sem VAT)

P-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC STMicroelectronics STS10P4LLF6
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

40 V

Series

STripFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Height

1.5mm

Forward Diode Voltage

1.1V

País de Origem

China

Detalhes do produto

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more