Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
20.15mm
Detalhes do produto
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
R$ 3.437,40
R$ 114,58 Each (In a Tube of 30) (Sem VAT)
30
R$ 3.437,40
R$ 114,58 Each (In a Tube of 30) (Sem VAT)
30
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Tubo |
---|---|---|
30 - 60 | R$ 114,58 | R$ 3.437,40 |
90 - 480 | R$ 96,44 | R$ 2.893,20 |
510 - 960 | R$ 86,42 | R$ 2.592,60 |
990+ | R$ 76,20 | R$ 2.286,00 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
20.15mm
Detalhes do produto