Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Height
0.7mm
Forward Diode Voltage
1.2V
País de Origem
Thailand
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R$ 1,58
Each (On a Reel of 3000) (Sem VAT)
3000
R$ 1,58
Each (On a Reel of 3000) (Sem VAT)
3000
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Bobina |
---|---|---|
3000 - 3000 | R$ 1,58 | R$ 4.740,00 |
6000 - 6000 | R$ 1,52 | R$ 4.560,00 |
9000+ | R$ 1,48 | R$ 4.440,00 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Height
0.7mm
Forward Diode Voltage
1.2V
País de Origem
Thailand