N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S

Nº de Estoque RS: 133-2796Marca: ToshibaPart Number: TK11P65W,RQ(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.1mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

2.3mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

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R$ 123,10

R$ 24,62 Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S

5

Disponível em múltiplos de 5
5R$ 123,10
10R$ 246,20
15R$ 369,30
20R$ 492,40
25R$ 563,00
30R$ 675,60
35R$ 788,20
40R$ 900,80
45R$ 1.013,40
50R$ 1.100,50
55R$ 1.210,55
60R$ 1.320,60
65R$ 1.430,65
70R$ 1.540,70
75R$ 1.650,75

R$ 123,10

R$ 24,62 Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S
Informações de estoque temporariamente indisponíveis.

5

Disponível em múltiplos de 5
5R$ 123,10
10R$ 246,20
15R$ 369,30
20R$ 492,40
25R$ 563,00
30R$ 675,60
35R$ 788,20
40R$ 900,80
45R$ 1.013,40
50R$ 1.100,50
55R$ 1.210,55
60R$ 1.320,60
65R$ 1.430,65
70R$ 1.540,70
75R$ 1.650,75

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
5 - 20R$ 24,62R$ 123,10
25 - 45R$ 22,52R$ 112,60
50 - 245R$ 22,01R$ 110,05
250 - 495R$ 21,38R$ 106,90
500+R$ 21,17R$ 105,85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.1mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

2.3mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more