Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
2.38mm
Minimum Operating Temperature
-55 °C
País de Origem
Malaysia
Detalhes do produto
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 11,90
Each (On a Reel of 2000) (Sem VAT)
2000
R$ 11,90
Each (On a Reel of 2000) (Sem VAT)
2000
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
2.38mm
Minimum Operating Temperature
-55 °C
País de Origem
Malaysia
Detalhes do produto