Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
1.55mm
País de Origem
China
Detalhes do produto
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Verifique novamente mais tarde.
R$ 18,96
Each (In a Pack of 5) (Sem VAT)
5
R$ 18,96
Each (In a Pack of 5) (Sem VAT)
5
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 45 | R$ 18,96 | R$ 94,80 |
50 - 245 | R$ 18,08 | R$ 90,40 |
250 - 495 | R$ 16,61 | R$ 83,05 |
500 - 1245 | R$ 15,88 | R$ 79,40 |
1250+ | R$ 15,12 | R$ 75,60 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
1.55mm
País de Origem
China
Detalhes do produto