Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
País de Origem
China
Detalhes do produto
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 16,39
Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 16,39
Each (In a Pack of 5) (Sem VAT)
Padrão
5
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 45 | R$ 16,39 | R$ 81,95 |
50 - 245 | R$ 15,83 | R$ 79,15 |
250 - 495 | R$ 11,82 | R$ 59,10 |
500 - 1245 | R$ 11,17 | R$ 55,85 |
1250+ | R$ 10,08 | R$ 50,40 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
País de Origem
China
Detalhes do produto