Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Series
SQ Rugged
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.04mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 8,90
Each (In a Pack of 20) (Sem VAT)
Padrão
20
R$ 8,90
Each (In a Pack of 20) (Sem VAT)
Padrão
20
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
20 - 180 | R$ 8,90 | R$ 178,00 |
200 - 480 | R$ 7,25 | R$ 145,00 |
500 - 980 | R$ 5,96 | R$ 119,20 |
1000 - 1980 | R$ 4,66 | R$ 93,20 |
2000+ | R$ 3,78 | R$ 75,60 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Series
SQ Rugged
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.04mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto