Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MDmesh V Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220FP
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.299Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Informações de estoque temporariamente indisponíveis.
R$ 126,14
R$ 63,07 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 126,14
R$ 63,07 Each (In a Pack of 2) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
2
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 2 - 18 | R$ 63,07 | R$ 126,14 |
| 20 - 98 | R$ 52,15 | R$ 104,30 |
| 100 - 198 | R$ 40,33 | R$ 80,66 |
| 200+ | R$ 36,30 | R$ 72,60 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MDmesh V Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220FP
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.299Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.