Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Energy Rating
221mJ
Automotive Standard
No
País de Origem
China
Detalhes do produto
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informações de estoque temporariamente indisponíveis.
R$ 150,10
R$ 15,01 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 150,10
R$ 15,01 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 90 | R$ 15,01 | R$ 150,10 |
| 100 - 490 | R$ 13,64 | R$ 136,40 |
| 500+ | R$ 11,60 | R$ 116,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Energy Rating
221mJ
Automotive Standard
No
País de Origem
China
Detalhes do produto
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
