Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
H
Automotive Standard
No
Detalhes do produto
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informações de estoque temporariamente indisponíveis.
R$ 80,57
R$ 80,57 Each (Sem VAT)
Padrão
1
R$ 80,57
R$ 80,57 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
1
| Quantidade | Preço unitário |
|---|---|
| 1 - 9 | R$ 80,57 |
| 10+ | R$ 53,38 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
H
Automotive Standard
No
Detalhes do produto
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
