Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Package Type
SO-8
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Typical Gate Charge Qg @ Vgs
25nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Length
5mm
Height
1.65mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
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R$ 25.950,00
R$ 10,38 Each (On a Reel of 2500) (Sem VAT)
2500
R$ 25.950,00
R$ 10,38 Each (On a Reel of 2500) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Package Type
SO-8
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Typical Gate Charge Qg @ Vgs
25nC
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Length
5mm
Height
1.65mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
