Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Package Type
SOT-223
Series
STN6N60M2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
6.8mm
Height
1.8mm
Standards/Approvals
No
Automotive Standard
No
País de Origem
China
Detalhes do produto
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Informações de estoque temporariamente indisponíveis.
R$ 25.600,00
R$ 6,40 Each (On a Reel of 4000) (Sem VAT)
4000
R$ 25.600,00
R$ 6,40 Each (On a Reel of 4000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
4000
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Package Type
SOT-223
Series
STN6N60M2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
6.8mm
Height
1.8mm
Standards/Approvals
No
Automotive Standard
No
País de Origem
China
Detalhes do produto
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.