Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
PowerFLAT
Maximum Continuous Forward Current If
8A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
5
Peak Reverse Current Ir
65μA
Maximum Forward Voltage Vf
1.95V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
800A
Maximum Operating Temperature
175°C
Length
7.9mm
Height
0.75mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
The STMicroelectronics 650V power schottky silicon carbide diode has a current rating of 8A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. It enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom & network, industrial or renewable energy domain.
Informações de estoque temporariamente indisponíveis.
R$ 149.220,00
R$ 49,74 Each (On a Reel of 3000) (Sem VAT)
3000
R$ 149.220,00
R$ 49,74 Each (On a Reel of 3000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
3000
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
PowerFLAT
Maximum Continuous Forward Current If
8A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
5
Peak Reverse Current Ir
65μA
Maximum Forward Voltage Vf
1.95V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
800A
Maximum Operating Temperature
175°C
Length
7.9mm
Height
0.75mm
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
The STMicroelectronics 650V power schottky silicon carbide diode has a current rating of 8A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. It enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom & network, industrial or renewable energy domain.