Documentos Técnicos
Especificações
Brand
BroadcomMount Type
Surface
Product Type
Optocoupler
Maximum Forward Voltage
1.8V
Number of Channels
1
Number of Pins
8
Package Type
SO
Maximum Input Current
80mA
Isolation Voltage
5000Vrms
Logic Output
Yes
Minimum Operating Temperature
-40°C
Maximum Current Transfer Ratio
53%
Maximum Operating Temperature
105°C
Minimum Current Transfer Ratio
19%
Standards/Approvals
CSA approval, UL1577 recognised, IEC 60747-5-5 Approval for Reinforced Insulation
Series
ACNU
Automotive Standard
No
País de Origem
Philippines
Detalhes do produto
The Broadcom ACNU-250L is a single-channel 1MBd optocoupler device in an 11-mm stretched SO8 package. The device is equipped with an insulating layer between the light emitting diode and integrated photon detector to provide electrical insulation between the input and output. Having separate connections for the photodiode bias and output transistor collector reduces the base-collector capacitance and enhances the data speed up to a hundred times compared to a conventional photo-transistor coupler.
Informações de estoque temporariamente indisponíveis.
R$ 49.100,00
R$ 49,10 Each (On a Reel of 1000) (Sem VAT)
1000
R$ 49.100,00
R$ 49,10 Each (On a Reel of 1000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1000
Documentos Técnicos
Especificações
Brand
BroadcomMount Type
Surface
Product Type
Optocoupler
Maximum Forward Voltage
1.8V
Number of Channels
1
Number of Pins
8
Package Type
SO
Maximum Input Current
80mA
Isolation Voltage
5000Vrms
Logic Output
Yes
Minimum Operating Temperature
-40°C
Maximum Current Transfer Ratio
53%
Maximum Operating Temperature
105°C
Minimum Current Transfer Ratio
19%
Standards/Approvals
CSA approval, UL1577 recognised, IEC 60747-5-5 Approval for Reinforced Insulation
Series
ACNU
Automotive Standard
No
País de Origem
Philippines
Detalhes do produto
The Broadcom ACNU-250L is a single-channel 1MBd optocoupler device in an 11-mm stretched SO8 package. The device is equipped with an insulating layer between the light emitting diode and integrated photon detector to provide electrical insulation between the input and output. Having separate connections for the photodiode bias and output transistor collector reduces the base-collector capacitance and enhances the data speed up to a hundred times compared to a conventional photo-transistor coupler.