Documentos Técnicos
Especificações
Brand
MicrochipProduct Type
Parallel EEPROM
Memory Size
64kB
Interface Type
Parallel
Package Type
SOIC
Mount Type
Surface
Pin Count
28
Organisation
8K x 8 bit
Maximum Clock Frequency
5MHz
Minimum Supply Voltage
4.5V
Number of Bits per Word
8
Maximum Supply Voltage
5.5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
85°C
Height
2.8mm
Length
17.9mm
Standards/Approvals
No
Width
10.3mm
Series
AT28HC64BF
Data Retention
10year
Supply Current
40mA
Maximum Random Access Time
120ns
Automotive Standard
No
Number of Words
8192
País de Origem
Taiwan, Province Of China
Detalhes do produto
The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Informações de estoque temporariamente indisponíveis.
R$ 3.610,71
R$ 133,73 Each (In a Tube of 27) (Sem VAT)
27
R$ 3.610,71
R$ 133,73 Each (In a Tube of 27) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
27
Documentos Técnicos
Especificações
Brand
MicrochipProduct Type
Parallel EEPROM
Memory Size
64kB
Interface Type
Parallel
Package Type
SOIC
Mount Type
Surface
Pin Count
28
Organisation
8K x 8 bit
Maximum Clock Frequency
5MHz
Minimum Supply Voltage
4.5V
Number of Bits per Word
8
Maximum Supply Voltage
5.5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
85°C
Height
2.8mm
Length
17.9mm
Standards/Approvals
No
Width
10.3mm
Series
AT28HC64BF
Data Retention
10year
Supply Current
40mA
Maximum Random Access Time
120ns
Automotive Standard
No
Number of Words
8192
País de Origem
Taiwan, Province Of China
Detalhes do produto
The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.