Documentos Técnicos
Especificações
Brand
onsemiProduct Type
Optocoupler
Mount Type
Surface
Maximum Forward Voltage
1.4V
Number of Channels
1
Packaging
Tape & Reel
Number of Pins
4
Package Type
SMT
Typical Rise Time
4μs
Maximum Input Current
20mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
3%
Maximum Operating Temperature
110°C
Typical Fall Time
3μs
Minimum Current Transfer Ratio
0.2%
Standards/Approvals
UL and VDE, C-UL
Series
FOD
Automotive Standard
No
Detalhes do produto
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
Informações de estoque temporariamente indisponíveis.
R$ 5.510,00
R$ 5,51 Each (On a Reel of 1000) (Sem VAT)
1000
R$ 5.510,00
R$ 5,51 Each (On a Reel of 1000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1000
| Quantidade | Preço unitário | Per Bobina |
|---|---|---|
| 1000 - 1000 | R$ 5,51 | R$ 5.510,00 |
| 2000 - 4000 | R$ 5,39 | R$ 5.390,00 |
| 5000 - 7000 | R$ 5,33 | R$ 5.330,00 |
| 8000 - 9000 | R$ 5,27 | R$ 5.270,00 |
| 10000+ | R$ 5,21 | R$ 5.210,00 |
Documentos Técnicos
Especificações
Brand
onsemiProduct Type
Optocoupler
Mount Type
Surface
Maximum Forward Voltage
1.4V
Number of Channels
1
Packaging
Tape & Reel
Number of Pins
4
Package Type
SMT
Typical Rise Time
4μs
Maximum Input Current
20mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
3%
Maximum Operating Temperature
110°C
Typical Fall Time
3μs
Minimum Current Transfer Ratio
0.2%
Standards/Approvals
UL and VDE, C-UL
Series
FOD
Automotive Standard
No
Detalhes do produto
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
