Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N, Type P
Maximum Drain Source Voltage Vds
58V
Package Type
TQFP-64
Series
L98GD
Mount Type
Surface
Pin Count
64
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
150°C
Standards/Approvals
AEC-Q100
Width
1mm
Automotive Standard
AEC-Q100
País de Origem
Malaysia
Detalhes do produto
The STMicroelectronics 8-channel MOSFET is a pre-driver configurable for low-side, high-side, Peak and hold and H-Bridge load control. It is designed to comply with the requirements of automotive passenger vehicles, as well as automotive commercial vehicles. The device offers the possibility of controlling two independent H-Bridges. The driver outputs are protected against short circuit condition, also protects the external MOS in case of an overcurrent event.
Informações de estoque temporariamente indisponíveis.
R$ 179,57
R$ 179,57 Each (Sem VAT)
1
R$ 179,57
R$ 179,57 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1
| Quantidade | Preço unitário |
|---|---|
| 1 - 9 | R$ 179,57 |
| 10 - 49 | R$ 147,59 |
| 50 - 99 | R$ 120,06 |
| 100+ | R$ 119,05 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N, Type P
Maximum Drain Source Voltage Vds
58V
Package Type
TQFP-64
Series
L98GD
Mount Type
Surface
Pin Count
64
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
150°C
Standards/Approvals
AEC-Q100
Width
1mm
Automotive Standard
AEC-Q100
País de Origem
Malaysia
Detalhes do produto
The STMicroelectronics 8-channel MOSFET is a pre-driver configurable for low-side, high-side, Peak and hold and H-Bridge load control. It is designed to comply with the requirements of automotive passenger vehicles, as well as automotive commercial vehicles. The device offers the possibility of controlling two independent H-Bridges. The driver outputs are protected against short circuit condition, also protects the external MOS in case of an overcurrent event.