Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.065Ω
Channel Mode
Enhancement
País de Origem
China
Detalhes do produto
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
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P.O.A.
Padrão
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P.O.A.
Informações de estoque temporariamente indisponíveis.
Padrão
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.065Ω
Channel Mode
Enhancement
País de Origem
China
Detalhes do produto
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
