Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Series
SCTL35N65G2V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
22V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Standards/Approvals
No
Width
8.1mm
Height
950μm
Automotive Standard
No
Detalhes do produto
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Informações de estoque temporariamente indisponíveis.
R$ 988.230,00
R$ 329,41 Each (On a Reel of 3000) (Sem VAT)
3000
R$ 988.230,00
R$ 329,41 Each (On a Reel of 3000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
3000
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Series
SCTL35N65G2V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
22V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Standards/Approvals
No
Width
8.1mm
Height
950μm
Automotive Standard
No
Detalhes do produto
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.