STMicroelectronics STripFET H7 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 STB100N10F7

Nº de Estoque RS: 792-5697PMarca: STMicroelectronicsPart Number: STB100N10F7
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET H7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

61nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 STB100N10F7
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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 STB100N10F7

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET H7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

61nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Detalhes do produto

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more