STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-263 STB60NF06LT4

Nº de Estoque RS: 795-6944Marca: STMicroelectronicsPart Number: STB60NF06LT4
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

15 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Detalhes do produto

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Ver tudo em MOSFETs

Informações de estoque temporariamente indisponíveis.

R$ 181,15

R$ 36,23 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-263 STB60NF06LT4
Selecione o tipo de embalagem

R$ 181,15

R$ 36,23 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-263 STB60NF06LT4

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

QuantidadePreço unitárioPer Pacote
5 - 20R$ 36,23R$ 181,15
25 - 45R$ 34,92R$ 174,60
50 - 120R$ 31,90R$ 159,50
125 - 245R$ 29,09R$ 145,45
250+R$ 28,14R$ 140,70

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

15 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Detalhes do produto

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more