Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
340mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Maximum Operating Temperature
150°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
País de Origem
China
Detalhes do produto
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Informações de estoque temporariamente indisponíveis.
R$ 152,65
R$ 30,53 Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 152,65
R$ 30,53 Each (In a Pack of 5) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
5
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 45 | R$ 30,53 | R$ 152,65 |
| 50 - 245 | R$ 29,99 | R$ 149,95 |
| 250 - 495 | R$ 29,50 | R$ 147,50 |
| 500+ | R$ 25,96 | R$ 129,80 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
340mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Maximum Operating Temperature
150°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
País de Origem
China
Detalhes do produto
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.