STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 2.2 A, 1 kV Enhancement, 3-Pin TO-252 STD4NK100Z

Nº de Estoque RS: 906-2776Marca: STMicroelectronicsPart Number: STD4NK100Z
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

1kV

Package Type

TO-252

Series

MDmesh, SuperMESH

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.8Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

País de Origem

China

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Ver tudo em MOSFETs

Informações de estoque temporariamente indisponíveis.

R$ 238,75

R$ 47,75 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 2.2 A, 1 kV Enhancement, 3-Pin TO-252 STD4NK100Z
Selecione o tipo de embalagem

R$ 238,75

R$ 47,75 Each (In a Pack of 5) (Sem VAT)

STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 2.2 A, 1 kV Enhancement, 3-Pin TO-252 STD4NK100Z

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

QuantidadePreço unitárioPer Pacote
5 - 5R$ 47,75R$ 238,75
10+R$ 46,03R$ 230,15

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

1kV

Package Type

TO-252

Series

MDmesh, SuperMESH

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.8Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

90W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

País de Origem

China

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more