STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 53 A, 500 V, 4-Pin ISOTOP STE53NC50

Nº de Estoque RS: 485-7383Marca: STMicroelectronicsPart Number: STE53NC50
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

500 V

Series

MDmesh, SuperMESH

Package Type

ISOTOP

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

460 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

310 nC @ 10 V

Width

25.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.2mm

Maximum Operating Temperature

+150 °C

Height

9.1mm

Minimum Operating Temperature

-65 °C

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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R$ 649,36

R$ 649,36 Each (Sem VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 53 A, 500 V, 4-Pin ISOTOP STE53NC50

R$ 649,36

R$ 649,36 Each (Sem VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 53 A, 500 V, 4-Pin ISOTOP STE53NC50

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitário
1 - 9R$ 649,36
10 - 49R$ 608,45
50 - 99R$ 589,40
100 - 199R$ 527,53
200+R$ 499,67

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

500 V

Series

MDmesh, SuperMESH

Package Type

ISOTOP

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

460 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

310 nC @ 10 V

Width

25.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.2mm

Maximum Operating Temperature

+150 °C

Height

9.1mm

Minimum Operating Temperature

-65 °C

Detalhes do produto

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em