Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-3PF
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
143nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
79W
Maximum Operating Temperature
150°C
Height
26.7mm
Length
15.7mm
Standards/Approvals
No
Width
5.7mm
Automotive Standard
No
País de Origem
Korea, Republic Of
Detalhes do produto
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Informações de estoque temporariamente indisponíveis.
R$ 236,76
R$ 236,76 Each (Sem VAT)
Padrão
1
R$ 236,76
R$ 236,76 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
1
| Quantidade | Preço unitário |
|---|---|
| 1 - 9 | R$ 236,76 |
| 10+ | R$ 166,27 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-3PF
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
143nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
79W
Maximum Operating Temperature
150°C
Height
26.7mm
Length
15.7mm
Standards/Approvals
No
Width
5.7mm
Automotive Standard
No
País de Origem
Korea, Republic Of
Detalhes do produto
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.