STMicroelectronics, Type N-Channel IGBT, 9 A 600 V, 3-Pin TO-220, Through Hole

Nº de Estoque RS: 795-7142Marca: STMicroelectronicsPart Number: STGF10NC60KD
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Documentos Técnicos

Especificações

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

9A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

25W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.4mm

Height

16.4mm

Standards/Approvals

No

Series

Low Drop

Automotive Standard

No

Detalhes do produto

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Ver tudo em IGBTs

Informações de estoque temporariamente indisponíveis.

R$ 206,40

R$ 20,64 Each (In a Pack of 10) (Sem VAT)

STMicroelectronics, Type N-Channel IGBT, 9 A 600 V, 3-Pin TO-220, Through Hole
Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 10.

Produção -

Disponível em múltiplos de 10.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

10

Disponível em múltiplos de 10
10R$ 206,40
20R$ 412,80
30R$ 619,20
40R$ 825,60
50R$ 1.032,00
60R$ 1.238,40
70R$ 1.444,80
80R$ 1.651,20
90R$ 1.857,60
100R$ 2.064,00
110R$ 2.270,40
120R$ 2.476,80
130R$ 2.683,20
140R$ 2.889,60
150R$ 3.096,00

R$ 206,40

R$ 20,64 Each (In a Pack of 10) (Sem VAT)

STMicroelectronics, Type N-Channel IGBT, 9 A 600 V, 3-Pin TO-220, Through Hole

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 10.

Produção -

Disponível em múltiplos de 10.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

10

Disponível em múltiplos de 10
10R$ 206,40
20R$ 412,80
30R$ 619,20
40R$ 825,60
50R$ 1.032,00
60R$ 1.238,40
70R$ 1.444,80
80R$ 1.651,20
90R$ 1.857,60
100R$ 2.064,00
110R$ 2.270,40
120R$ 2.476,80
130R$ 2.683,20
140R$ 2.889,60
150R$ 3.096,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

9A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

25W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.4mm

Height

16.4mm

Standards/Approvals

No

Series

Low Drop

Automotive Standard

No

Detalhes do produto

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more