Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
20A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Length
10.4mm
Height
9.15mm
Automotive Standard
No
País de Origem
Malaysia
Detalhes do produto
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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R$ 965,50
R$ 19,31 Each (In a Tube of 50) (Sem VAT)
50
R$ 965,50
R$ 19,31 Each (In a Tube of 50) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
20A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Length
10.4mm
Height
9.15mm
Automotive Standard
No
País de Origem
Malaysia
Detalhes do produto
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
