Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-220
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
País de Origem
China
Detalhes do produto
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Informações de estoque temporariamente indisponíveis.
P.O.A.
Each (In a Pack of 5) (Sem VAT)
Padrão
5
P.O.A.
Each (In a Pack of 5) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-220
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
País de Origem
China
Detalhes do produto
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
