Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
216A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
2
Maximum Power Dissipation Pd
714W
Configuration
Single
Package Type
ECOPACK
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
País de Origem
China
Detalhes do produto
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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Informações de estoque temporariamente indisponíveis.
R$ 387,26
R$ 387,26 Each (Sem VAT)
Padrão
1
R$ 387,26
R$ 387,26 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
1
| Quantidade | Preço unitário |
|---|---|
| 1 - 9 | R$ 387,26 |
| 10 - 99 | R$ 335,38 |
| 100 - 199 | R$ 294,23 |
| 200+ | R$ 290,41 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
216A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
2
Maximum Power Dissipation Pd
714W
Configuration
Single
Package Type
ECOPACK
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
País de Origem
China
Detalhes do produto
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
