STMicroelectronics STGW20H60DF, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

Nº de Estoque RS: 792-5798Marca: STMicroelectronicsPart Number: STGW20H60DF
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Ver tudo em IGBTs

Documentos Técnicos

Especificações

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

167W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.15mm

Standards/Approvals

RoHS

Series

Trench Gate Field Stop

Automotive Standard

No

Detalhes do produto

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Ver tudo em IGBTs

Informações de estoque temporariamente indisponíveis.

R$ 92,20

R$ 46,10 Each (In a Pack of 2) (Sem VAT)

STMicroelectronics STGW20H60DF, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 2.

Produção -

Disponível em múltiplos de 2.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

2

Disponível em múltiplos de 2
2R$ 92,20
4R$ 184,40
6R$ 276,60
8R$ 368,80
10R$ 444,00
12R$ 532,80
14R$ 621,60
16R$ 710,40
18R$ 799,20
20R$ 811,60
22R$ 892,76
24R$ 973,92
26R$ 1.055,08
28R$ 1.136,24
30R$ 1.217,40

R$ 92,20

R$ 46,10 Each (In a Pack of 2) (Sem VAT)

STMicroelectronics STGW20H60DF, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 2.

Produção -

Disponível em múltiplos de 2.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

2

Disponível em múltiplos de 2
2R$ 92,20
4R$ 184,40
6R$ 276,60
8R$ 368,80
10R$ 444,00
12R$ 532,80
14R$ 621,60
16R$ 710,40
18R$ 799,20
20R$ 811,60
22R$ 892,76
24R$ 973,92
26R$ 1.055,08
28R$ 1.136,24
30R$ 1.217,40

QuantidadePreço unitárioPer Pacote
2 - 8R$ 46,10R$ 92,20
10 - 18R$ 44,40R$ 88,80
20 - 48R$ 40,58R$ 81,16
50 - 98R$ 37,07R$ 74,14
100+R$ 35,70R$ 71,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

167W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.15mm

Standards/Approvals

RoHS

Series

Trench Gate Field Stop

Automotive Standard

No

Detalhes do produto

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more