Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
220W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±25 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.75V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
ECOPACK, JEDEC JESD97
Width
15.75mm
Automotive Standard
No
Detalhes do produto
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informações de estoque temporariamente indisponíveis.
R$ 173,28
R$ 86,64 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 173,28
R$ 86,64 Each (In a Pack of 2) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
2
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 2 - 18 | R$ 86,64 | R$ 173,28 |
| 20 - 98 | R$ 71,60 | R$ 143,20 |
| 100 - 198 | R$ 55,39 | R$ 110,78 |
| 200+ | R$ 49,79 | R$ 99,58 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
220W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±25 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.75V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
ECOPACK, JEDEC JESD97
Width
15.75mm
Automotive Standard
No
Detalhes do produto
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
