Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
50A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.1V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Length
15.9mm
Height
5.1mm
Automotive Standard
No
País de Origem
China
Detalhes do produto
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Informações de estoque temporariamente indisponíveis.
R$ 1.310,40
R$ 43,68 Each (In a Tube of 30) (Sem VAT)
30
R$ 1.310,40
R$ 43,68 Each (In a Tube of 30) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
30
| Quantidade | Preço unitário | Per Tubo |
|---|---|---|
| 30 - 270 | R$ 43,68 | R$ 1.310,40 |
| 300 - 720 | R$ 43,25 | R$ 1.297,50 |
| 750+ | R$ 42,76 | R$ 1.282,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
50A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.1V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Length
15.9mm
Height
5.1mm
Automotive Standard
No
País de Origem
China
Detalhes do produto
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
