Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Operating Temperature
175°C
Length
15.8mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Detalhes do produto
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
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Informações de estoque temporariamente indisponíveis.
R$ 141,52
R$ 70,76 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 141,52
R$ 70,76 Each (In a Pack of 2) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
2
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 2 - 18 | R$ 70,76 | R$ 141,52 |
| 20 - 98 | R$ 70,04 | R$ 140,08 |
| 100 - 198 | R$ 69,46 | R$ 138,92 |
| 200+ | R$ 65,94 | R$ 131,88 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
315W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Operating Temperature
175°C
Length
15.8mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Detalhes do produto
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
