Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
315W
Maximum Operating Temperature
175°C
Length
15.25mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Detalhes do produto
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Informações de estoque temporariamente indisponíveis.
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
2
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Bobina)
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
H2PAK
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
315W
Maximum Operating Temperature
175°C
Length
15.25mm
Standards/Approvals
No
Width
10.4mm
Height
4.8mm
Automotive Standard
No
Detalhes do produto
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
