Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
2.6A
Maximum Drain Source Voltage Vds
1500V
Package Type
H2PAK-2
Series
STH4N150
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
10Ω
Channel Mode
MOSFET
Maximum Power Dissipation Pd
208W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
35.1nC
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
150°C
Transistor Configuration
N Channel Mosfet
Height
15.8mm
Length
10.4mm
Width
4.7mm
Automotive Standard
AEC-Q101
País de Origem
China
Informações de estoque temporariamente indisponíveis.
R$ 47.260,00
R$ 47,26 Each (On a Reel of 1000) (Sem VAT)
1000
R$ 47.260,00
R$ 47,26 Each (On a Reel of 1000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1000
| Quantidade | Preço unitário | Per Bobina |
|---|---|---|
| 1000 - 1000 | R$ 47,26 | R$ 47.260,00 |
| 2000 - 4000 | R$ 46,76 | R$ 46.760,00 |
| 5000+ | R$ 45,62 | R$ 45.620,00 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
2.6A
Maximum Drain Source Voltage Vds
1500V
Package Type
H2PAK-2
Series
STH4N150
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
10Ω
Channel Mode
MOSFET
Maximum Power Dissipation Pd
208W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
35.1nC
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
150°C
Transistor Configuration
N Channel Mosfet
Height
15.8mm
Length
10.4mm
Width
4.7mm
Automotive Standard
AEC-Q101
País de Origem
China