Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
710V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
57W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
1mm
Length
5.4mm
Standards/Approvals
No
Width
6.35mm
Automotive Standard
No
Detalhes do produto
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Informações de estoque temporariamente indisponíveis.
R$ 101,68
R$ 50,84 Each (Supplied as a Tape) (Sem VAT)
Padrão
2
R$ 101,68
R$ 50,84 Each (Supplied as a Tape) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
2
| Quantidade | Preço unitário | Per Fita |
|---|---|---|
| 2 - 18 | R$ 50,84 | R$ 101,68 |
| 20 - 98 | R$ 45,43 | R$ 90,86 |
| 100 - 198 | R$ 41,23 | R$ 82,46 |
| 200+ | R$ 35,95 | R$ 71,90 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
710V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
57W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
1mm
Length
5.4mm
Standards/Approvals
No
Width
6.35mm
Automotive Standard
No
Detalhes do produto
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.