Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Height
0.95mm
Length
6.2mm
Standards/Approvals
No
Width
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Detalhes do produto
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
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R$ 191,80
R$ 19,18 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 191,80
R$ 19,18 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 90 | R$ 19,18 | R$ 191,80 |
| 100 - 490 | R$ 12,96 | R$ 129,60 |
| 500+ | R$ 10,81 | R$ 108,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Height
0.95mm
Length
6.2mm
Standards/Approvals
No
Width
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Detalhes do produto
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
