Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Informações de estoque temporariamente indisponíveis.
R$ 146,42
R$ 73,21 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 146,42
R$ 73,21 Each (In a Pack of 2) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
2
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 2 - 18 | R$ 73,21 | R$ 146,42 |
| 20 - 98 | R$ 65,45 | R$ 130,90 |
| 100 - 198 | R$ 59,29 | R$ 118,58 |
| 200+ | R$ 51,70 | R$ 103,40 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Detalhes do produto
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.