Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
299mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Detalhes do produto
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Informações de estoque temporariamente indisponíveis.
R$ 124,36
R$ 62,18 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 124,36
R$ 62,18 Each (In a Pack of 2) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
2
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 2 - 18 | R$ 62,18 | R$ 124,36 |
| 20 - 98 | R$ 51,34 | R$ 102,68 |
| 100 - 198 | R$ 39,77 | R$ 79,54 |
| 200+ | R$ 35,82 | R$ 71,64 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
299mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Detalhes do produto
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.