Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
2
Peak Reverse Current Ir
170μA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
385A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
4.6mm
País de Origem
China
Detalhes do produto
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Informações de estoque temporariamente indisponíveis.
R$ 35,81
R$ 35,81 Each (Sem VAT)
1
R$ 35,81
R$ 35,81 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
1
| Quantidade | Preço unitário |
|---|---|
| 1 - 9 | R$ 35,81 |
| 10 - 99 | R$ 25,55 |
| 100 - 499 | R$ 22,43 |
| 500 - 999 | R$ 22,03 |
| 1000+ | R$ 21,65 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Documentos Técnicos
Especificações
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
2
Peak Reverse Current Ir
170μA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
385A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
4.6mm
País de Origem
China
Detalhes do produto
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
